Semiconductor VSIS laser

Details Semiconductor VSIS laser Semiconductor VSIS laser

1989-07-17

1990-02-13

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 48, 372 49, H01S 319

Patent

active

049013289

ABSTRACT:
A V-channeled substrate inner strip (VSIS) semiconductor laser includes a p-Ga.sub.1-31 y Al.sub.y As active layer sandwiched between a P-Ga.sub.1-x Al.sub.x As first cladding layer and an n-Ga.sub.1-x Al.sub.x As second cladding layer. The AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52 in order to minimize the mode competition noise at an operating temperature. In a preferred form, the cavity length is longer than 300 .mu.m so as to minimize the occurrence of the mode competition noise at the operating temperature. Furthermore, the reflectivity R.sub.1 of the front facet and the reflectivity R.sub.2 of the rear facet are selected to satisfy the condition 0.1.ltoreq.ln(1/R.sub.1 .multidot.R.sub.2).ltoreq.1.

REFERENCES:
Yamamoto et al., "Visible GaAlAs V--Channeled Substrate Inner Stripe Laser with Stabilized Mode Using p--GaAs Substrate," Appl. Phys. Let. 40(5), Mar. 1, 1982, pp. 372-374.
Chen et al., "Narrow Double--Current--Confinement Channeled--Substrate Planar Laser Fabricated by Double Etching Technique", Appl. Phys. Let. 36(8), Apr. 15, 1980, pp. 634-636.

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