1978-10-25
1980-09-23
Edlow, Martin H.
357 88, 357 90, H01L 2990
Patent
active
042246318
ABSTRACT:
A semiconductor voltage reference device formed by ion implanting particles into a semiconductor body having first and second doped regions of opposite type conductivity formed therein. Such particles are implanted with a peak concentration at a predetermined depth from a surface of the body, providing a third region of conductivity type opposite that of the first region and having a doping concentration greater than that of the second region. The particles extend beneath the surface of the body into the first and second regions, a junction being formed between the first and third regions beneath the surface of the body. Electrodes are provided in ohmic contact with the first and second doped regions. When the junction is reverse biased by applying a proper voltage across the electrodes the junction breaks down beneath the surface of the body establishing a fixed or reference voltage between the electrodes.
REFERENCES:
patent: 4051504 (1977-09-01), Hille
patent: 4079402 (1978-03-01), Dunkly
patent: 4127859 (1978-11-01), Nelson
Brown, Jr. Clyde M.
Schmoock James C.
Vickery Earl C.
Edlow Martin H.
Pannone Joseph D.
Raytheon Company
Sharkansky Richard M.
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