Semiconductor vibration detecting structure

Details Semiconductor vibration detecting structure Semiconductor vibration detecting structure

1986-04-09

1987-06-16

Birmiel, Howard A.

Measuring and testing

Vibration

Resonance, frequency, or amplitude study

73658, 73DIG1, 361283, G01N 2904

Patent

active

046728490

ABSTRACT:
A semiconductor vibration detecting structure formed on a semiconductor substrate and a method of manufacturing the same in which the curvature of the cantilever of the vibration detecting structure in the direction gradually deviating from the surface of the semiconductor substrate can be determined by the thickness of the upper nitride layer for regulating the curvature of the cantilever, with the thicknesses of the other layers constituting the cantilever and the length thereof being constant. In the semiconductor vibration detecting structure according to the present invention, even if vibrations having relatively large vibration levels are applied to the detecting structure, the cantilever of the vibration detecting structure vibrates well but never hits the surface of the semiconductor substrate, thus enabling a wide rage of mechanical vibrations to be detected with a high sensitivity.

REFERENCES:
patent: 4507705 (1985-03-01), Hoshino et al.
patent: 4571661 (1986-02-01), Hoshino

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