Semiconductor varactor with reduced parasitic resistance

Details Semiconductor varactor with reduced parasitic resistance Semiconductor varactor with reduced parasitic resistance

2006-05-30

2006-05-30

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

C257S312000, C257S600000, C438S379000

Reexamination Certificate

active

07053465

ABSTRACT:
A semiconductor varactor with reduced parasitic resistance. A contact isolation structure (32) is formed in a well region (20). The gate contact structures (70) are formed above the contact isolation structure (32) reducing the parasitic resistance. In addition, contact structures are formed on the gate layer (50) over the well regions (20) is a further embodiment to reduce the parasitic resistance.

REFERENCES:
patent: 5910673 (1999-06-01), Hsu et al.
patent: 6316805 (2001-11-01), Lin et al.
patent: 6351020 (2002-02-01), Tarabbia et al.

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