Semiconductor vapor phase growth apparatus

Details Semiconductor vapor phase growth apparatus Semiconductor vapor phase growth apparatus

1987-05-12

1989-02-28

Pianalto, Bernard

Coating apparatus

Program, cyclic, or time control

Having prerecorded program medium

118729, B05C 1100

Patent

active

048075612

ABSTRACT:
A vapor phase growth substrate is conveyed into a heated atomosphere, and vapor phase growth gas is supplied from a nozzle connected to a gas supply means to the substrate in the middle portion of conveyance. Process program information relating to the conveying speed of the substrate, the heating temperature, the gas flow rate and the types of the gases being used is stored, in advance, in a memory of a controller, the information is read from the memory, to adoptively control the conveying speed of the substrate, the heating temperature, and the gas supply.

REFERENCES:
patent: 3790404 (1974-02-01), Garnache et al.
patent: 4430959 (1984-02-01), Ebata et al.

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