Semiconductor vapor phase growing apparatus

Details Semiconductor vapor phase growing apparatus Semiconductor vapor phase growing apparatus

1983-01-26

1984-02-14

Page, Thurman K.

Coating apparatus

Program, cyclic, or time control

Having prerecorded program medium

118665, 118666, 118688, 118692, 118693, 118695, 118698, 364472, 364500, B05C 100, B05C 300

Patent

active

044309597

ABSTRACT:
In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON-OFF controlling the valves according to a predetermined program. The control device comprises a memory region for storing a process program group including a group of process programs including informations regarding a time for designating a process of vapor phase growth in the reaction furnace, gases utilized, flow quantity thereof and furnace temperature, and a system program that decodes the program group for producing control signals for the valves.

REFERENCES:
patent: 4125643 (1978-11-01), Reuschel et al.
patent: 4332833 (1982-06-01), Aspnes et al.
patent: 4348886 (1982-09-01), Faith, Jr.
patent: 4388342 (1983-06-01), Suzuki et al.

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