Coating apparatus – Program – cyclic – or time control – Having prerecorded program medium
Patent
1988-06-09
1990-09-11
Page, Thurman K.
Coating apparatus
Program, cyclic, or time control
Having prerecorded program medium
118 501, 118719, 118720, 118725, 118620, 118728, B05C 1100
Patent
active
RE0333263
ABSTRACT:
In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON-OFF controlling the valves according to a predetermined program. The control device comprises a memory region for storing a process program group including a group of process programs including information regarding a time for designating a process of vapor phase growth in the reaction furnace, gases utilized, flow quantity thereof and furnace temperature, and a system program that decodes the program group for producing control signals for the valves.
REFERENCES:
patent: 4125643 (1978-11-01), Reuschel
patent: 4332833 (1982-06-01), Aspens et al.
patent: 4348886 (1982-09-01), Faith
patent: 4388342 (1983-06-01), Suzuki et al.
Brochure on AMC 7900 RP Reactors, sold by Applied Materials, Inc. of Santa Clara, Calif.
"Automation of Semiconductor Device Manufacturing", Denshi Zairyo, Nov. 1979.
"Computer Control Epitaxial Production Systems", Don Jackson of Motorola, Inc., Solid State Technology, Nov. 1972.
"An Analysis of LBCVD System Parameter for Polysilicon, Silicon Nitride, and Silicon Dioxide Deposition", W. A. Brown and T. I. Kamins of Hewlett Packard Labs, Solid State Technology, Jul. 1979.
Ebata Hitoshi
Matunaga Shigetugu
Page Thurman K.
Toshiba Kikai Kabushiki Kaisha
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