Semiconductor vapor phase growing apparatus

Coating apparatus – Control means responsive to a randomly occurring sensed... – Temperature responsive

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118697, 118715, 118730, C23C 1308

Patent

active

049826930

ABSTRACT:
In a semiconductor vapor phase growing apparatus wherein a semiconductor wafer is heated in a reaction furnace, and an output of a source for heating, the temperature of the wafer, and flow quantities of gases supplied to the reaction furnace for vapor phase growing a semiconductor on the wafer by a chemical reaction of the gases are controlled by a control unit according to a predetermined sequences, there are provided a temperature detector for detecting the temperature of the wafer and output control means controlling the output of the source according to a given reference value. The control unit is consitituted by memory means storing a program of executing the sequences and linearly raising and lowering the wafer temperature at a predetermined temperature gradient in a plurality of divided time lateral units by making different the rates of temperature change in respective time interval units, and a CPU for processing the program.

REFERENCES:
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patent: 2916593 (1959-12-01), Herrick
patent: 3171755 (1965-03-01), Reuschel et al.
patent: 4031851 (1977-06-01), Camahort
patent: 4396640 (1983-08-01), Rocheleau et al.
patent: 4430959 (1984-02-01), Ebata et al.

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