Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1993-04-23
1995-04-04
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 41, 257507, 359293, 372 92, 372 99, 313307, 313355, H01L 2724, H01S 308, H01J 146, H01J 102
Patent
active
054040256
ABSTRACT:
A semiconductor vacuum device including a semiconductor substrate 3, an insulator film 2 formed on the substrate 3, and a single crystal semiconductor film 1 formed on the insulator film 2. The single crystal semiconductor film 1 has a first and a second tapered edge opposite to one another but spaced apart over a gap formed in the insulator film 2. The first tapered edge acts 6 as a cathode and the second tapered edge acts as a gate 7, the substrate 1 acting as an anode into which said electrons emitted from the cathode above.
REFERENCES:
patent: 5214347 (1993-05-01), Gray
patent: 5227699 (1993-07-01), Busta
Vaudaine et al, "Microtips Fluorescent Display," IEDM Dec. 1991, pp. 197-200.
Gray et al, "Film Edge Emitters: The Basis for a New Vacuum Transistor" IEDM, Dec. 1991, pp. 201-204.
Jiang et al, "GaAs Planar-Doped-Barrier Vacuum Microelectronic Electron Emitters," IEEE Electron Device Letters, vol. 14, No. 3, Mar. 1993, pp. 143-145.
H. F. Gray et al., "A Vacuum Field Effect Transistor Using Silicon Field Emitter Arrays," Naval Research Lab., Washington, D.C., IEDM Technical Digest, 1986, pp. 776-779.
C. A. Spindt, "A Thin-Film Field-Emission Cathode," Journal of Applied Physics--Communications, vol. 39, 1968, pp. 3504-3507.
NEC Corporation
Saadat Mahshid D.
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