Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated
Patent
1996-01-29
1997-06-24
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
257780, 257783, H01L 2328
Patent
active
056419961
ABSTRACT:
An improved semiconductor unit package is disclosed. This package is implemented by a semiconductor device having an electrode pad, a substrate having a terminal electrode, a bump electrode formed on the electrode pad, a conductive adhesion layer with flexibility, and an encapsulating layer formed by curing a composition the viscosity and thixotropy index of which are below 100 Pa.multidot.s and below 1.1, respectively. Such a composition essentially consists of (A) a resin binder that contains, for example, a polyepoxide, an acid anhydride, and a rheology modifier and (B) a filler. The rheology modifier is one capable of impeding interaction between a free acid contained in the acid anhydride and a polar group at the surface of the filler. An encapsulant with improved flowability is used, so that the encapsulant readily flows and spreads to fill a gap between the semiconductor device and the substrate with no air bubbles. This achieves semiconductor unit packages with high reliability and productivity.
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Bessho Yoshihiro
Harada Mitsuru
Omoya Kazunori
Oobayashi Takashi
Sakurai Wataru
Clark S. V.
Matsushita Electric - Industrial Co., Ltd.
Saadat Mahshid D.
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