Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1998-06-29
2000-02-22
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257415, 257417, 257420, 7351401, 7351402, 7351421, 7351429, 7351436, 73DIG1, H01L 2982
Patent
active
060283327
ABSTRACT:
A semiconductor type yaw rate sensor has a substrate, a beam structure formed from a semiconductor material and having at least one anchor portion disposed on the substrate, a weighted portion located above the substrate a predetermined gap therefrom, and a beam portion which extends from the anchor portion and supports the weighted portion. A movable electrode is formed onto the weighted portion, and a fixed electrode is formed on the substrate in such a manner that the fixed electrode faces the movable electrode. When a drive voltage is applied between the movable electrode and the fixed electrode, the beam structure is forcibly caused to vibrate in a direction that is horizontal relative to a substrate surface plane. In this yaw rate sensor, a strain gauge to monitor forced vibration of the beam structure is formed in the beam portion. As a result, the forced vibration of the beam structure can be monitored with a simple structure.
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Fujita Makiko
Kano Kazuhiko
Ohtsuka Yoshinori
Denso Corporation
Mintel William
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