Semiconductor type gas rate sensor

Measuring and testing – Speed – velocity – or acceleration – Angular rate using gyroscopic or coriolis effect

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7351403, G01P 900

Patent

active

056103336

ABSTRACT:
A semiconductor type gas rate sensor which is capable of accurately sensing with a sufficient sensitivity an angular velocity acting on its body made of semiconductor substrates having a nozzle port and a gas path etched therein with a pair of heat wires (heat-sensitive resistance elements) provided in the gas path, wherein an optimal flow of gas injected into the gas path through the nozzle port is ensured by designing the nozzle port of 300 to 1000 microns in width and of not less than 2 mm in length and providing the gas path at its downstream end with an outlet allowing the gas to flow straight out from the gas path therethrough.

REFERENCES:
patent: 3500690 (1970-03-01), Schuemann
patent: 3581578 (1971-06-01), Schuemann
patent: 4594894 (1986-06-01), Moffatt
patent: 5107707 (1992-04-01), Takahashi et al.

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