Active solid-state devices (e.g. – transistors – solid-state diode – With metal contact alloyed to elemental semiconductor type... – In pn junction tunnel diode
Patent
1995-12-05
1997-10-21
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
With metal contact alloyed to elemental semiconductor type...
In pn junction tunnel diode
257 94, 257184, H01L 2940, H01L 3300, H01L 310328
Patent
active
056799632
ABSTRACT:
The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.
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Klem John F.
Zolper John C.
Fahmy Wael
Libman George H.
Sandia Corporation
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