Semiconductor trench structure

Details Semiconductor trench structure Semiconductor trench structure

2005-07-19

2005-07-19

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S388000, C438S389000, C438S391000, C438S561000, C438S700000

Reexamination Certificate

active

06919255

ABSTRACT:
A method for fabricating a semiconductor trench structure includes forming a trench in a semiconductor substrate and filling it with a filler. A first thermal process having a first maximum temperature cures the filler. Removing the filler from an upper region of the trench as far as a boundary surface defines a collar region. In a second thermal process having a second maximum temperature that is not significantly higher than the first maximum temperature, a liner is deposited on the collar region and the boundary surface. The liner is removed from the boundary surface, thereby exposing the filler. The filler is then removed from a lower region of the trench.

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patent: 6680249 (2004-01-01), Lu et al.
patent: 2002/0197823 (2002-12-01), Yoo et al.
patent: 100 14 920 (2001-07-01), None
patent: 100 40 464 (2002-02-01), None

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