Semiconductor trench isolation structure formed substantially wi

Details Semiconductor trench isolation structure formed substantially wi Semiconductor trench isolation structure formed substantially wi

1997-03-26

1999-08-10

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438460, 438437, 148DIG33.3, 148 50, H01L 2176

Patent

active

059373083

ABSTRACT:
A substantially in situ trench isolation process is provided. The process includes forming a trench regions between active regions in a semiconductor substrate. The semiconductor substrate may be covered with a protective oxide pad and/or nitride layer. In a single chamber, an oxide is thermally grown in the trench, the nitride layer is substantially stripped, and a fill dielectric is deposited in the trench and over the active and trench regions. The invention contemplates thermal growth, etch, and deposition processes to be performed serially in a single chamber without opening the chamber. The invention further contemplates modifying or adapting a conventional process chamber to all for the in situ processing of thermal growth, etch, and deposition processes. Alternatively, a specialized chamber may be provided.

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