Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-06-12
2007-06-12
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S020000, C257SE29193
Reexamination Certificate
active
11247866
ABSTRACT:
A transistor is formed using a semiconductor substrate and forming a control electrode overlying the semiconductor substrate. A first current electrode is formed within the semiconductor substrate and adjacent the control electrode. The first current electrode has a first predetermined semiconductor material. A second current electrode is formed within the semiconductor substrate and adjacent the control electrode to form a channel within the semiconductor substrate. The second current electrode has a second predetermined semiconductor material that is different from the first predetermined semiconductor material. The first predetermined semiconductor material is chosen to optimize bandgap energy of the first current electrode, and the second predetermined semiconductor material is chosen to optimize strain of the channel.
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Nguyen Bich-Yen
Thean Voon-Yew
Triyoso Dina H.
Freescale Semiconductor Inc.
King Robert L.
Tsai H. Jey
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