Semiconductor transducers employing ion implantation terminal co

Details Semiconductor transducers employing ion implantation terminal co Semiconductor transducers employing ion implantation terminal co

1981-08-28

1983-10-18

Albritton, C. L.

Electrical resistors

Strain gauge type

Dynamometer type

338 4, 357 26, G01L 122

Patent

active

044108710

ABSTRACT:
There is disclosed a semiconductor pressure transducer which employs a piezoresistive array fabricated on the surface of a thin substrate member and having the piezoresistors coupled to metallic contacts via ion implanted terminal leads.

REFERENCES:
patent: 3873956 (1975-03-01), Kurtz

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