Semiconductor transducers employing flexure frames

Electrical resistors – Strain gauge type – Fluid- or gas pressure-actuated

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338 5, G01L 122

Patent

active

042361370

ABSTRACT:
A pressure transducer employs a semiconductor diaphragm with a top surface having located thereon a central boss area of a trapezoidal cross section surrounded or "framed" by a continuous groove of a predetermined width. Piezoresistive sensors are formed on the bottom surface of said diaphragm with a first sensor adjacent the outer edge of said groove and another sensor parallel to said first sensor and adjacent the inner edge of said groove, said groove operative as a stress concentrating area to enable said sensors to provide a relatively large linear output upon application of a force to said diaphragm.

REFERENCES:
patent: 3213400 (1965-10-01), Gieb
patent: 3970982 (1976-07-01), Kurtz et al.
patent: 4051451 (1977-09-01), Kurtz et al.

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