Semiconductor transducers employing flat bondable surfaces with

Details Semiconductor transducers employing flat bondable surfaces with Semiconductor transducers employing flat bondable surfaces with

1977-12-12

1980-05-13

Ruehl, Charles A.

Measuring and testing

Fluid pressure gauge

Diaphragm

73777, 338 4, G01L 906

Patent

active

042022177

ABSTRACT:
A semiconductor pressure transducer includes a base member fabricated from n-type silicon. The base member has a central depression defining an active area and located on a bottom surface; diffused in the top surface, is at least one contact area which is directed from the active region towards the periphery of said base member. A piezoresistive sensor is located on said top surface and in contact with said contact area within said active region. A layer of epitaxial material surrounds the active region and has an aperture on the surface which is in communication with the contact area outside said active region. The epitaxial layer is polished at a top surface and a housing is coupled to the region by means of a suitable bond. Alternate methods of fabricating the transducer are shown employing both polycrystalline and monocrystalline epitaxial layers.

REFERENCES:
patent: 3739315 (1973-06-01), Kurtz et al.
patent: 3753196 (1973-08-01), Kurtz et al.
patent: 3858150 (1974-12-01), Gurtler et al.
patent: 4003127 (1977-01-01), Jaffee et al.

Affiliated with

Also associated with

Rating

Semiconductor transducers employing flat bondable surfaces with does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor transducers employing flat bondable surfaces with , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor transducers employing flat bondable surfaces with will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-924741