Semiconductor transducer

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

73777, 307278, H01L 2984, G01B 716

Patent

active

046806067

ABSTRACT:
A semiconductor transducer (10) including a substrate having a well (18) formed in one surface thereof and a semiconductor layer (14) having a first surface (26) bonded to the substrate about the periphery of the well to form a diaphragm (30) and a second surface (28) which is substantially coplanar to the first surface and has a pedestal (16) projecting therefrom which is disposed above the well. The side walls (32) of the pedestal are substantially orthogonal to the second surface of the semiconductor layer. Means (34) are provided for sensing the deflection of the diaphragm as a function of force applied to the pedestal. The substrate includes protrusions (38) which extend upward from the bottom of the well to limit the deflection of the diaphragm.

REFERENCES:
patent: 4079508 (1978-03-01), Nunn

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