Semiconductor timing device with radioactive material at the flo

Details Semiconductor timing device with radioactive material at the flo Semiconductor timing device with radioactive material at the flo

1976-11-16

1981-06-23

Munson, Gene M.

Horology: time measuring systems or devices

Cases

Adaptable

357 29, 357 54, 357 91, 368203, H01L 2978, H01L 2934, G01T 124, G04C 300

Patent

active

042754054

ABSTRACT:
A semiconductor timing device having a charge storage region, the charge state of which may be detected by field effect action, the charge storage region containing radioactive material which decays by emitting charged nuclear particles, so that the charge state of the charge storage region varies progressively with time.

REFERENCES:
patent: 3370414 (1968-02-01), Lazrus et al.
patent: 3562613 (1971-02-01), Adler et al.
patent: 3582656 (1971-06-01), Koehler
patent: 3629582 (1971-12-01), Koehler et al.
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3825946 (1974-07-01), Frohman-Bentchkowsky
patent: 3872493 (1975-03-01), Roberts et al.
Frohman-Bentchkowsky "ROM Can Be Electrically Programmed . . . ", Electronics (5/10/71) pp. 91-95.
Price, Nuclear Radiation Detection McGraw-Hill, New York, 2nd Ed., 1964, pp. 1-3, 14-21.
Bhatia et al., "Irradiation Technique for Making Single Electrode Charge Coupled Storage Cell", IBM Tech. Disclosure Bulletin, vol. 15 (8/72) pp. 723-724.
Everhart et al., "Determination of Kilovolt Energy Dissipation vs. Penetration Distance in Solid Materials", Journal of Applied Physics, vol. 42 (12/71) pp. 5837-5846.
Greeneich et al., "An Approximate Formula for Electron Energy Versus Path Length", IEEE Trans. Electron Devices (6/73) pp. 598-600.

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