Semiconductor thyristor devices having breakover protection

Details Semiconductor thyristor devices having breakover protection Semiconductor thyristor devices having breakover protection

1976-05-28

1977-12-13

Miller, Jr., Stanley D.

357 13, 357 39, 357 49, 357 86, H01L 2974

Patent

active

040632776

ABSTRACT:
Semiconductor thyristor devices with means, inherent in the structure thereof, for protecting the devices against damage due to breakover. The means requires, in a semiconductor controlled rectifier device, for example, that the active gate region have a comparatively smaller total charge than the adjacent base layer separating the active gate region from the anode layer.

REFERENCES:
patent: 3792320 (1974-02-01), Hutson
patent: 3855611 (1974-12-01), Neilson

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