Semiconductor thyristor device with recess

Details Semiconductor thyristor device with recess Semiconductor thyristor device with recess

1993-05-28

1995-02-28

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With extended latchup current level

257148, 257170, 257490, H01L 2974

Patent

active

053939956

ABSTRACT:
There is disclosed a semiconductor device wherein a p layer (7) is formed in an isolating portion (Z) and portions (1a, 1b) of an n-type base layer (1) lie on opposite sides of the p layer (7), the upper surfaces of the p layer (7) and the portions (1a, 1b) lying in the same plane as the upper surface of a p layer (3). The presence of the p layer (7) provides for high resistance to breakdown and high formation accuracy of the p layers (2, 3, 7) as compared with a structure in which the isolating portion (Z) lies in the bottom of a the recess, whereby the semiconductor device is less susceptible to short-circuit between the p-type base layer (2) and the p layer (3).

REFERENCES:
patent: 3943548 (1976-03-01), Terasawa
patent: 4691224 (1987-09-01), Takada
patent: 4801945 (1989-01-01), Iwanishi
patent: 4881107 (1989-11-01), Matsushita
Shinohe et al., "Isolation Structure Optimization for High Power Reverse Conductive GTO", 1988 IEEE PESC '88 Record, Apr. 1988, pp. 908-914.
Patent Abstracts of Japan, vol. 11, No. 77 (E-487) (2524), Mar. 7, 1987.
Patent Abstracts of Japan, vol. 13, No. 155 (E-743) (3503), Apr. 14, 1989.

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