Semiconductor thyristor device with laterally displaced auxiliar

Details Semiconductor thyristor device with laterally displaced auxiliar Semiconductor thyristor device with laterally displaced auxiliar

1981-04-17

1983-11-08

Clawson, Jr., Joseph E.

357 20, 357 86, 357 68, H01L 2974

Patent

active

044145594

ABSTRACT:
A semiconductor device having a semiconductor body including an anode layer, a first and second base layer, a cathode layer formed on the second base layer and an auxiliary region formed on the second base layer apart from the cathode layer. The semiconductor body has a peripheral zone, a gate peripheral zone, a corridor and an enlarged corridor, the corridor and the enlarged corridor being between a cathode electrode and an auxiliary electrode in contact with the auxiliary region. The width of the gate peripheral zone is larger than that of the peripheral zone and the width of the enlarged corridor is larger than that of the corridor.

REFERENCES:
patent: 3440501 (1969-04-01), Piccone et al.
patent: 3573572 (1971-04-01), Cooper et al.
patent: 3943548 (1976-03-01), Terasawa
patent: 3990090 (1976-11-01), Terasawa et al.
patent: 4016591 (1977-04-01), Terasawa
patent: 4028721 (1977-06-01), Yatsuo et al.
patent: 4063270 (1977-12-01), Kimura et al.
patent: 4114178 (1978-09-01), Terasawa et al.
G. E. SCR Manual, 5th Edition, .COPYRGT.1972, p. 7.

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