Semiconductor thyristor device having integral ballast means

Details Semiconductor thyristor device having integral ballast means Semiconductor thyristor device having integral ballast means

1977-01-07

1981-09-29

Clawson, Jr., Joseph E.

357 13, 357 39, 357 86, 357 51, H01L 2974

Patent

active

042926467

ABSTRACT:
A semiconductor thyristor device having a cathode region and an anode region comprises ballast means adjacent thereto. The device further comprises first and second electrode means which are positioned such that only the cathode region and the anode region respectively are contacted thereby. The present structure is compatible with conventional device structures.

REFERENCES:
patent: 3351826 (1967-11-01), Hermann
patent: 3360696 (1967-12-01), Neilson et al.

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