Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1992-12-28
1995-02-28
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, 257903, H01L 2978
Patent
active
053939921
ABSTRACT:
A lower gate type semiconductor device, in which, for increasing an on-current of a lower gate type thin film transistor and restricting an off-current, there is provided a gate-controlled offset region different from a channel region in one or both conductivity types. This region increases the on-current of the transistor, provides a reduction of a leakage current, and restriction of a subthreshold coefficient. A two-dimensional size can also be reduced by altering the gate height. The on-current is increased, and the leakage current is reduced in the device. The offset region is composed of a semiconductor material and is formed at the end of a drain region of the device.
REFERENCES:
patent: 4633284 (1986-12-01), Hansell et al.
patent: 4980732 (1990-12-01), Okazawa
patent: 5001540 (1991-03-01), Ishihara
patent: 5233207 (1993-08-01), Anzai
patent: 5298764 (1994-03-01), Yamanaka et al.
Limanek Robert P.
NEC Corporation
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