Semiconductor thin film, thin film transistor, method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C438S486000

Reexamination Certificate

active

07732815

ABSTRACT:
A semiconductor thin film according to an embodiment of the present invention includes: a polycrystallized semiconductor thin film formed by applying laser light to an amorphous semiconductor thin film; and crystal grains arranged into a lattice shape with a size that is about ½ of an oscillation wavelength of the laser light.

REFERENCES:
patent: 2002/0008093 (2002-01-01), Ukita et al.
patent: 2003/0010762 (2003-01-01), Koide
patent: 2005/0023531 (2005-02-01), Shoji et al.
patent: 2005/0026401 (2005-02-01), Shimomura et al.
patent: 2006/0223333 (2006-10-01), Li et al.
patent: 1365513 (2002-08-01), None
patent: 2003-17505 (2003-01-01), None
“Pulsed laser crystallization and doping for thin film transistors.” J.B. Boyce, J.P. Lu, J. Ho, R.T. Fulks, P. Mei* (* = corresponding author); Journal of Non-Crystalline Solids 266-269 (2000) 1252-1259. Xerox Palo Alto Research Center, Palo Alto, CA 94304.
Y. Nakata, et al., “Crystallization of an a-Si film by a Nd:YAG pulse laser beam with linear polarization”, TFT3-3, AM-LDC 2000, pp. 265-268.

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