Semiconductor thin film, semiconductor device and...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor...

Reexamination Certificate

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C257S059000, C257S064000, C257S070000, C257S072000

Reexamination Certificate

active

11458412

ABSTRACT:
A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the substrate surface without including crystal boundaries therein, allowing the active layer to consist of the mono-domain region only. The insulating film underlying the active layer has a specific surface configuration of an intended pattern in profile, including projections or recesses. To fabricate the active layer, form a silicon oxide film by sputtering on the substrate. Pattern the silicon oxide film providing the surface configuration. Form an amorphous silicon film by low pressure CVD on the silicon oxide film. Retain in the silicon oxide film and/or the amorphous silicon film certain metallic element for acceleration of silicon film to a crystalline silicon film. Then, perform a second heat treatment in the halogen atmosphere forming on the crystalline silicon film a thermal oxide film containing halogen, whereby the crystalline silicon film alters to a mono-domain region.

REFERENCES:
patent: 4905073 (1990-02-01), Chen
patent: 4975756 (1990-12-01), Haken
patent: 5089862 (1992-02-01), Warner, Jr.
patent: 5247198 (1993-09-01), Homma
patent: 5285093 (1994-02-01), Lage
patent: 5321650 (1994-06-01), Kikuchi
patent: 5348903 (1994-09-01), Pfiester
patent: 5403772 (1995-04-01), Zhang
patent: 5426064 (1995-06-01), Zhang
patent: 5459688 (1995-10-01), Pfiester
patent: 5481121 (1996-01-01), Zhang
patent: 5488000 (1996-01-01), Zhang
patent: 5492843 (1996-02-01), Adachi
patent: 5498904 (1996-03-01), Harata et al.
patent: 5501989 (1996-03-01), Takayama
patent: 5508533 (1996-04-01), Takemura
patent: 5514880 (1996-05-01), Nishimura
patent: 5529937 (1996-06-01), Zhang
patent: 5534716 (1996-07-01), Takemura
patent: 5539216 (1996-07-01), Nguyen
patent: 5541640 (1996-07-01), Larson
patent: 5543352 (1996-08-01), Ohtani
patent: 5550070 (1996-08-01), Funai et al.
patent: 5563426 (1996-10-01), Zhang
patent: 5569610 (1996-10-01), Zhang
patent: 5569936 (1996-10-01), Zhang
patent: 5576556 (1996-11-01), Takemura
patent: 5580792 (1996-12-01), Zhang
patent: 5585291 (1996-12-01), Ohtani
patent: 5589694 (1996-12-01), Takayama
patent: 5595923 (1997-01-01), Zhang
patent: 5595944 (1997-01-01), Zhang
patent: 5604360 (1997-02-01), Zhang
patent: 5605846 (1997-02-01), Ohtani
patent: 5606179 (1997-02-01), Yamazaki
patent: 5608232 (1997-03-01), Yamazaki
patent: 5612250 (1997-03-01), Ohtani
patent: 5614426 (1997-03-01), Funada
patent: 5614733 (1997-03-01), Zhang
patent: 5616506 (1997-04-01), Takemura
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki
patent: 5624851 (1997-04-01), Takayama
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki
patent: 5643826 (1997-07-01), Ohtani
patent: 5646424 (1997-07-01), Zhang
patent: 5648277 (1997-07-01), Zhang
patent: 5654203 (1997-08-01), Ohtani
patent: 5656825 (1997-08-01), Kusumoto
patent: 5663077 (1997-09-01), Adachi
patent: 5677549 (1997-10-01), Takayama
patent: 5696003 (1997-12-01), Makita
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada
patent: 5700333 (1997-12-01), Yamazaki
patent: 5705829 (1998-01-01), Miyanaga
patent: 5712191 (1998-01-01), Nakajima
patent: 5731978 (1998-03-01), Tamai
patent: 5744824 (1998-04-01), Kousai
patent: 5759879 (1998-06-01), Iwasaki
patent: 5818076 (1998-10-01), Zhang
patent: 5821562 (1998-10-01), Makita
patent: 5849601 (1998-12-01), Yamazaki
patent: 5858823 (1999-01-01), Yamazaki
patent: 5886366 (1999-03-01), Yamazaki
patent: 5893730 (1999-04-01), Yamazaki
patent: 5923962 (1999-07-01), Ohtani
patent: 5923968 (1999-07-01), Yamazaki
patent: 5962897 (1999-10-01), Takemura
patent: 6071764 (2000-06-01), Zhang et al.
patent: 6077758 (2000-06-01), Zhang et al.
patent: 6091115 (2000-07-01), Ohtani
patent: 6093937 (2000-07-01), Yamazaki
patent: 6122527 (2000-09-01), Robinson
patent: 6218678 (2001-04-01), Zhang
patent: 6285042 (2001-09-01), Ohtani
patent: 6323072 (2001-11-01), Yamazaki
patent: 6335541 (2002-01-01), Ohtani
patent: 6455401 (2002-09-01), Zhang et al.
patent: 6787806 (2004-09-01), Yamazaki
patent: 6924213 (2005-08-01), Zhang et al.
patent: 7056775 (2006-06-01), Zhang et al.
patent: 0 481 777 (1992-04-01), None
patent: 0 651 431 (1995-05-01), None
patent: 02-143417 (1990-06-01), None
patent: 06-132218 (1994-05-01), None
patent: 06 232059 (1994-08-01), None
patent: 06 244103 (1994-09-01), None
patent: 06-333826 (1994-12-01), None
patent: 07-094757 (1995-04-01), None
patent: 07-192998 (1995-07-01), None
patent: 07-288227 (1995-10-01), None
patent: 08-046208 (1996-02-01), None
patent: 08-288515 (1996-11-01), None
patent: 1992-0008930 (1992-05-01), None
patent: 1995-0004453 (1995-02-01), None
patent: 1995-0012580 (1995-05-01), None
patent: 1995-0021777 (1995-07-01), None
Shimokawa, et al.; “Characterization of High—Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement”; Japanese Journal of Applied Physics; vol. 27, No. 5, pp. 751-758 (May 1988).

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