Compositions – Electrically conductive or emissive compositions – Metal compound containing
Reexamination Certificate
2011-08-16
2011-08-16
McGinty, Douglas (Department: 1765)
Compositions
Electrically conductive or emissive compositions
Metal compound containing
C252S520100, C252S519100, C252S519330, C257S043000, C257S057000, C257S059000, C257SE29080, C257SE21459, C438S104000, C977S773000
Reexamination Certificate
active
07998372
ABSTRACT:
Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, in the case where the semiconductor thin film is used as a switching device for driving a display, even when overlapped with a pixel part, the luminance of a display panel does not deteriorate. Specifically, a transparent semiconductor thin film40is produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10+17cm−3or less, a Hall mobility of 2 cm2/V·sec or higher, and an energy band gap of 2.4 EV or more.
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Office Action for Chinese Patent Application No. 200680042998 issued Jun. 29, 2010.
English Translation of Office Action for Chinese Patent Application No. 200680042998 issued Jun. 29, 2010.
Inoue Kazuyoshi
Tanaka Nobuo
Tanaka, legal representative Tokie
Yano Koki
Idemitsu Kosan Co. Ltd.
McGinty Douglas
Millen White Zelano & Branigan P.C.
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