Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2005-09-06
2005-09-06
Abraham, Fetsum (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S099000, C257S100000, C257S288000, C257S385000
Reexamination Certificate
active
06940143
ABSTRACT:
According to the semiconductor thin-film and semiconductor device manufacturing method of the present invention, an insulating film having a through-hole between two layers of silicon film is provided, the silicon film is partially melted by irradiating a laser thereon, and a substantially monocrystalline film is continuously formed extending via the through-hole from at least part of the layer of silicon film below the insulating film that continues to the through-hole, to at least part of the layer of silicon film above the insulating film. It is therefore sufficient to form a through-hole with a larger diameter than that of a hole formed by the conventional method, because the diameter of the through-hole in the insulating film may be the same size or slightly smaller than the size of a single crystal grain that comprises the polycrystal formed in the silicon film below the insulating film. Costly precision exposure devices and etching devices are therefore unnecessary. Numerous high-performance semiconductor devices can also be formed easily on a large glass substrate, as in large liquid-crystal displays and the like.
REFERENCES:
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patent: 6373136 (2002-04-01), Otsuka et al.
patent: A-57-155765 (1982-09-01), None
patent: A-58-090740 (1983-05-01), None
IBM Technical Disclosure Bulletin, “Single Crystal Thin Film Transistors,” pp. 257-258, Aug. 1993.
R. Ishihara et al., “Advanced Excimer-Laser Crystallization Techniques of Si Thin-Film for Location Control of Large Grains on Glass,” Proc. SPIE, vol. 4295, pp. 14-23, 2001.
J.B. Boyce et al., “Laser Processing of Amorphous Silicon for Large-Area Polysilicon Imagers,” Thin Solid Films, vol. 383, pp. 137-142, 2001.
Abraham Fetsum
Oliff & Berridg,e PLC
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