Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Forming a single-crystal region by liquefying a region of a...
Reexamination Certificate
2005-03-31
2009-11-03
Hug, Eric (Department: 1791)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Forming a single-crystal region by liquefying a region of a...
C117S044000, C117S904000, C438S487000, C438S149000, C438S942000
Reexamination Certificate
active
07611577
ABSTRACT:
A manufacturing method of a semiconductor thin film decreases the number of and controls the direction of crystal grain boundaries. A first beam irradiated onto amorphous silicon produces a radial temperature gradient centered on a tip of a concave. This forms a crystal grain in the concave tip, which grows in both the beam width and length direction. After the second beam and on, growth is repeated using the crystal grain formed in the tip of the concave as the seed. This forms a band-form crystal grain with a wider than that of the conventional narrow-line beam, with the tip of the concave being the start point. Further, by setting the periphery of the concave pattern to be equal or less than the crystal grain diameter in the direction vertical to the beam scanning direction, it is possible to form the band-form crystal grain being lined continuously.
REFERENCES:
patent: 5155791 (1992-10-01), Hsiung
patent: 5767003 (1998-06-01), Noguchi
patent: 6020224 (2000-02-01), Shimogaichi et al.
patent: 6072194 (2000-06-01), Wakita et al.
patent: 6117752 (2000-09-01), Suzuki
patent: 6281470 (2001-08-01), Adachi
patent: 6322625 (2001-11-01), Im
patent: 6440824 (2002-08-01), Hayashi et al.
patent: 6479837 (2002-11-01), Ogawa et al.
patent: 6503852 (2003-01-01), Hosono et al.
patent: 6555422 (2003-04-01), Yamazaki et al.
patent: 6645830 (2003-11-01), Shimoda et al.
patent: 6692999 (2004-02-01), Takei et al.
patent: 6770545 (2004-08-01), Yang
patent: 6777276 (2004-08-01), Crowder et al.
patent: 6809013 (2004-10-01), Ito
patent: 6815269 (2004-11-01), Okumura
patent: 7033434 (2006-04-01), Kim
patent: 7087505 (2006-08-01), Kimura et al.
patent: 7129124 (2006-10-01), Hongo et al.
patent: 7192479 (2007-03-01), Mitani et al.
patent: 7205184 (2007-04-01), Kim
patent: 2001/0001745 (2001-05-01), Im et al.
patent: 2001/0045974 (2001-11-01), Shoemaker et al.
patent: 2002/0104750 (2002-08-01), Ito
patent: 2002/0146893 (2002-10-01), Shimoda et al.
patent: 2003/0061984 (2003-04-01), Maekawa et al.
patent: 2003/0104682 (2003-06-01), Hara et al.
patent: 2003/0196589 (2003-10-01), Mitani et al.
patent: 2003/0224582 (2003-12-01), Shimoda et al.
patent: 2004/0043606 (2004-03-01), Crowder et al.
patent: 2004/0127066 (2004-07-01), Jung
patent: 2004/0142544 (2004-07-01), Kimura et al.
patent: 2004/0142582 (2004-07-01), Crowder et al.
patent: 2004/0209199 (2004-10-01), Kishima et al.
patent: 2004/0248386 (2004-12-01), Nishitani et al.
patent: 2006/0073622 (2006-04-01), Hartzell
patent: 2006/0177361 (2006-08-01), Kumomi
patent: 1373500 (2002-10-01), None
patent: 1396317 (2003-02-01), None
patent: 1457103 (2003-11-01), None
patent: 1480780 (2004-03-01), None
patent: 11-64883 (1999-03-01), None
patent: 2000-208769 (2000-07-01), None
patent: 2003-45803 (2003-02-01), None
patent: 2003-100628 (2003-04-01), None
Robert S. Sposili et al: Sequential lateral solidification of thin silicon films on SiO2.
Hug Eric
Malekzadeh Seyed Masoud
NEC Corporation
Young & Thompson
LandOfFree
Semiconductor thin film manufacturing method and device,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor thin film manufacturing method and device,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor thin film manufacturing method and device,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4082089