Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2011-07-19
2011-07-19
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S016000, C438S164000, C438S166000, C438S487000, C257S064000
Reexamination Certificate
active
07981701
ABSTRACT:
A method of forming a semiconductor thin film includes a highly sensitive inspection method for detecting lateral crystals and a crystallizing method. In the crystallizing method, the time-based pulse width of a laser SXL is modulated and an approximate band-like crystal silicon film SPSI is formed in a desired region while scanning the substrate SUB1bidirectionally in the X and −X directions. In the inspection method, an inspection beam PRO1is irradiated to the substrate just after the laser SXL is turned off. A protrusion TOKI will be formed on the silicon film portion where the laser SXL is turned off if the state of the silicon film is that of a lateral crystal SPSI. The inspection beam PRO1is scattered by the protrusion TOKI and observed by a detector. If the state of the silicon film is granular crystal GGSI or aggregated film AGSI, such a protrusion TOKI is not observed.
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Hatano Mutsuko
Hongo Mikio
Noda Takeshi
Yamaguchi Shin'ya
Yazaki Akio
Antonelli, Terry Stout & Kraus, LLP.
Booker Vicki B
Hitachi Displays Ltd.
Landau Matthew C
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