Semiconductor thin film in semiconductor device having grain bou

Details Semiconductor thin film in semiconductor device having grain bou Semiconductor thin film in semiconductor device having grain bou

1998-02-20

2000-10-31

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 49, 257 50, 257 51, 257 52, 257 57, 257 62, 257 64, 257 65, 257 66, 257 69, 257 70, H01L 2120

Patent

active

061406678

ABSTRACT:
To provide a semiconductor device having a function equivalent to that of IGFET, an activation layer is formed by a crystal silicon film crystallized by using a catalyst element helping promote crystallization and a heating treatment is carried out in an atmosphere including a halogen element by which the catalyst element is removed, the activation layer processed by such steps is constituted by a peculiar crystal structure and according to the crystal structure, a rate of incommensurate bonds in respect of all of bonds at grain boundaries is 5% or less (preferably, 3% or less).

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patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5897374 (1999-04-01), Yung-Fa Lin

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