Semiconductor thin film forming system

Details Semiconductor thin film forming system Semiconductor thin film forming system

2007-12-25

2007-12-25

Evans, Geoffrey S. (Department: 1725)

Electric heating

Metal heating

By arc

C219S121820, C219S121830, C438S487000

Reexamination Certificate

active

11021306

ABSTRACT:
In a semiconductor thin film forming system for modifying a predetermined region of a semiconductor thin film by exposing the semiconductor thin film to a projected light patterned through a pattern formed on a photo mask, the system includes a mechanism (opt20′) for uniformizing the light for exposure in a predetermined area on the photo mask. This system can provide a crystallized silicon film having a trap state density less than 1012 cm−2and can provide a silicon-insulating film interface exhibiting a low interface state density.

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