Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2007-08-28
2007-08-28
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S065000, C257S066000, C257S067000
Reexamination Certificate
active
11167320
ABSTRACT:
A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam38is being applied to the semiconductor thin film at a region to which the gas is being applied to thereby melt the semiconductor film, and crystallizing the semiconductor thin film in its solidification. The energy beam is applied while the high-temperature gas is being flowed, whereby the melted semiconductor thin film can have low solidification rate, whereby the polycrystal thin film can have large crystal grain diameters and can have good quality of little defects in crystal grains and little twins.
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Hara Akito
Sasaki Nobuo
Huynh Andy
Kratz Quintos & Hanson, LLP
Nguyen Thinh T
Sharp Kabushiki Kaisha
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