Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent
1998-07-22
2000-07-11
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
257 66, H01L 2904, H01L 31036
Patent
active
060876794
ABSTRACT:
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
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Mitsuki Toru
Miyanaga Akiharu
Ogata Yasushi
Ohtani Hisashi
Yamazaki Shunpei
Meier Stephen D.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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