Semiconductor temperature switches

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

357 38, 357 39, 307305, 307310, 307252B, 307252H, 318221H, H01L 2356, H01L 2974, H03K 335, H02P 144

Patent

active

039710564

ABSTRACT:
Germanium semiconductor temperature switches are described which are capable of intrinsically switching between high and low resistance states within a temperature range up to 55.degree.C, and are adapted for operating at voltages up to 400 volts. These temperature switches are disclosed in various configurations. Basic circuits for adjusting the temperatures at which such switches switch within a range are disclosed. Preferred methods of making the same are also disclosed.

REFERENCES:
patent: 3079484 (1963-02-01), Shockley et al.
patent: 3166680 (1965-01-01), Kevane et al.
"Germanium Power Switching Devices" - Philips et al. - IRE Transactions on Electron Devices, vol. ED-5, pp. 13-18, Jan., 1958.
"Temp. Variation of Parameters of SCR" - Raderecht et al., Jour. of Electronic Control, vol. 17, No. 10, pp. 145-147, (London) 1964.
"Temp. Dependence of Static Turn-on Current of Thyristors" - Dumanevich et al., Physics of PN Junctions & Semiconductors (U.S.S.R), pp. 137-141 (1971).

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