Semiconductor temperature sensor

Details Semiconductor temperature sensor Semiconductor temperature sensor

1985-08-16

1987-06-02

Goldberg, E. A.

Electrical resistors

Granular or powdered element

Carbon particles

H01C 710

Patent

active

046707310

ABSTRACT:
A temperature sensor in the form of a temperature-dependent semiconductor resistor operating according to the current-spreading principle includes a semiconductor body of one conductivity type of silicon, which is provided on its lower side with a conductive layer and is provided on its upper side with at least one contact zone of the one conductivity type. The upper side is coated with a silicon oxide layer or a silicon nitride layer. In order for the given resistance value to be maintained more accurately and the temperature coefficient to have only a small spread, the semiconductor body is provided at its surface adjacent the silicon oxide layer or silicon nitride layer with a surface zone of the opposite conductivity type. Thus, it is possible to limit to a minimum value or to completely compensate for the influence of charges at the silicon oxide layer or silicon nitride layer.

REFERENCES:
patent: 3881181 (1975-04-01), Khajezadeh
patent: 3936789 (1976-02-01), Matzen et al.
patent: 4463336 (1984-07-01), Black et al.

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