Semiconductor temperature compensation circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307296R, 307310, 330256, H03K 1760, H03K 508

Patent

active

041829620

ABSTRACT:
A semiconductor device which comprises a first current path formed of a first load, an n number of first transistors, each of whose bases is supplied with an input signal, a second transistor whose base is connected to a first bias power source, and an emitter resistor of said second transistor all connected in series between power supply terminals; and a second current path formed of a second load, a third transistor whose base is connected to a second bias power source through a base resistor, and an emitter resistor of the third transistor all connected in series between the power supply terminals, and wherein the resistance of the base resistor is chosen to be n times as large as that of the emitter resistor of the third transistor, thereby equalizing the amounts of current running through the first and second current paths.

REFERENCES:
patent: 3781648 (1973-12-01), Owens
patent: 3970947 (1976-07-01), Sato et al.

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