Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Patent
1998-03-03
2000-07-18
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
257471, H01L 27095, H01L 2947
Patent
active
06091128&
ABSTRACT:
Disclosed are semiconductor systems, such as integrated circuits utilizing Schotky barrier and/or diffused junction technology, which semiconductor systems incorporate material(s) that form rectifying junctions in both metallurgically and/or field induced N and P-type doping regions, and methods of their use. Disclosed are Schottky barrier based inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems and which can be operated as modulators, N and P-channel MOSFETS and CMOS formed therefrom, and (MOS) gate voltage controlled rectification direction and gate voltage controlled switching devices, and use of such material(s) to block parasitic current flow pathways. Simple demonstrative five mask fabrication procedures for inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to multiple device CMOS systems are also presented.
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Loke Steven H.
Welch James D.
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