Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2009-01-25
2010-02-02
Fahmy, Wael (Department: 2814)
Coherent light generators
Particular active media
Semiconductor
C372S045012, C372S050100, C372S092000, C372S094000, C438S029000, C438S031000, C438S046000, C438S047000
Reexamination Certificate
active
07656919
ABSTRACT:
The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
REFERENCES:
patent: 4392228 (1983-07-01), Okabe et al.
patent: 4488306 (1984-12-01), Sugino et al.
patent: 5037776 (1991-08-01), Galeuchet et al.
patent: 5336635 (1994-08-01), Anayama et al.
patent: 6233267 (2001-05-01), Nurmikko et al.
patent: 6282226 (2001-08-01), Furukawa
patent: 6320209 (2001-11-01), Hata et al.
patent: 6376269 (2002-04-01), Chen et al.
patent: 6519271 (2003-02-01), Kwon et al.
patent: 6535537 (2003-03-01), Kinoshita
patent: 6600765 (2003-07-01), Evans et al.
patent: 6807216 (2004-10-01), Hilliard
patent: 7242705 (2007-07-01), Kneissl et al.
patent: 7579627 (2009-08-01), Ueta et al.
patent: 2002/0027935 (2002-03-01), Anayama
patent: 2002/0080842 (2002-06-01), An et al.
patent: 2002/0145148 (2002-10-01), Okuyama et al.
patent: 2003/0026316 (2003-02-01), Behfar
patent: 2003/0026317 (2003-02-01), Behfar
patent: 2005/0045894 (2005-03-01), Okuyama et al.
patent: 2005/0063445 (2005-03-01), Mizutani et al.
patent: 2007/0081569 (2007-04-01), Kwon et al.
patent: 2007/0090365 (2007-04-01), Hayashi et al.
patent: 2002310666 (2002-10-01), None
patent: 2003046789 (2003-02-01), None
Beaumont, et al., “Magnesium Induces Changes in the Selective Growth of GaN by Metal Organic Vapor Phase Epitaxy”,Applied Physics Letters, vol. 72, No. 823, (Feb. 1998), 921-923.
Hiramatsu, K. et al., “Fabrication and Characterization of Low Defect Density GaN Using Facet-Controlled Epitaxial Lateral Overgrowth (FACELO)”,Journal of Crystal Growth, 221, (2000),316-326.
Bour David P.
Corzine Scott W.
Renne Ty Tan Michael
Avago Technologies ECBU (IP) Singapore Pte. Ltd.
Fahmy Wael
Sayadian Hrayr A
LandOfFree
Semiconductor system having a ring laser fabricated by... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor system having a ring laser fabricated by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor system having a ring laser fabricated by... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4199781