Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2007-10-02
2007-10-02
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S144000, C257S152000, C257S157000, C257S163000, C257S174000, C257S378000, C257S565000, C257SE21350, C257SE27079, C257SE29036, C257SE29037
Reexamination Certificate
active
11170064
ABSTRACT:
A semiconductor system includes a self arc-extinguishing device, and an IGBT that works as a thyristor when a current between a first terminal and a second terminal connected to a second well electrode is small, and as a bipolar transistor when that current is large, and automatically switches between them according to the magnitude of the current. The IGBT is formed with a first conductivity-type semiconductor substrate. On a surface layer of the substrate is a second conductivity-type well region to which a first well electrode is connected. A first conductivity-type emitter region, to which an emitter electrode is connected, is disposed on a surface layer in the well region. A control electrode is disposed through an insulating film partially covering the well and emitter regions. A second conductivity-type well layer, to which the second well electrode is connected, is disposed on a back surface side of the substrate. The self arc-extinguishing device is connected to the IGBT between the emitter electrode and the first terminal. The rectifying device is connected between the first well electrode and the first terminal.
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Estrada Michelle
Fuji Electric Holdings Co., Ltd.
Rabin & Berdo P.C.
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