Semiconductor switching devices

Details Semiconductor switching devices Semiconductor switching devices

1994-10-11

1996-08-27

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With means to increase breakdown voltage

257153, 257138, 257571, 257623, 257655, H01L 29744

Patent

active

055503926

ABSTRACT:
A process for manufacturing a semiconductor switching device (such as a thyristor device) comprises: etching a face of a semiconductor body to provide islands and channels which define a mesa-contoured surface; diffusing dopant of a first conductivity type through said surface so that the lines of equal concentration of the dopant in said body follow substantially the mesa-contoured surface; and diffusing dopant of a second conductivity type into said islands to form p-n junctions with said dopant of a first conductivity type. The diffusion of said dopant of a first conductivity type is followed by an out-diffusion step so that the dopant concentration of said dopant of a first conductivity type is at a maximum at a depth below said surface.

REFERENCES:
patent: 4525924 (1985-07-01), Schafer

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