Semiconductor switching device with reduced switching loss

Details Semiconductor switching device with reduced switching loss Semiconductor switching device with reduced switching loss

1992-02-28

1994-08-23

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257138, 257537, 257539, 257140, H01L 2974, H01L 31111, H01L 2900

Patent

active

053410041

ABSTRACT:
A semiconductor switching device including a first IGBT and a second IGBT connected in parallel The first IGBT has a low saturation voltage and a long fall time, whereas the second IGBT has a high saturation voltage and a short fall time. An input resistor is connected to the gate of the second IGBT, and a common drive signal is applied to a gate of the first IGBT, and to a gate of the second IGBT through the input resistor. The cutoff of the second IGBT is delayed when the first and second IGBTs are driven by the common drive signal so that the semiconductor switching device is turned off in the short fall time of the second IGBT. The switching speed is increased and the switching loss is decreased. Only a single drive circuit is enough for driving the device, enabling the miniaturization and low cost of the driving circuit.

REFERENCES:
patent: 4404658 (1983-09-01), Ports
patent: 4472642 (1984-09-01), Akamatsu
patent: 5097302 (1992-03-01), Fujihira et al.

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