Semiconductor switching device with breakdown diode formed in th

Details Semiconductor switching device with breakdown diode formed in th Semiconductor switching device with breakdown diode formed in th

1976-01-08

1978-08-22

Clawson, Jr., Joseph E.

357 13, 357 39, 357 55, 357 67, 357 86, 357 89, H01L 2974, H01L 2906

Patent

active

041092740

ABSTRACT:
A semiconductor switching device according to the invention has a semiconductor crystal comprising sequentially alternate layers of opposite conductivity type. The device comprises two emitters of different conductivity type, at least one gate base, another base of opposite conductivity type with respect to the first base adjacent to the gate base, and an additional region of conductivity type opposite to the gate base which is adjacent to the surface of the gate base and arranged completely or partially in the gate base. At a point where the additional region extends onto the surface, there is provided a recess the bottom area of which exceeds that of the exposed part of the additional area, so that this part is disposed within the bottom area of the recess without contacting the lateral walls of the recess.

REFERENCES:
patent: 3146135 (1964-08-01), Sah
patent: 3307049 (1967-02-01), Bernuth et al.
patent: 3408545 (1968-10-01), Dececco et al.
patent: 3622845 (1971-11-01), McIntyre et al.
patent: 3682708 (1972-08-01), Bennett
patent: 3913213 (1975-10-01), Mills et al.

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