Semiconductor switching device with anode shortening structure

Details Semiconductor switching device with anode shortening structure Semiconductor switching device with anode shortening structure

1990-02-05

1991-07-02

Hille, Rolf

357 39, 357 56, 357 86, 357 89, H01L 2974

Patent

active

050289748

ABSTRACT:
A semiconductor switching device includes a high resistance first base layer of n-type formed on a first emitter layer of p-type through a low resistance buffer layer of n.sup.+ -type, second base layer of p-type formed on the first base layer, second emitter layers of n.sup.+ -type separately formed on the second base layer, anode and cathode main electrodes formed in contact with the first and second emitter layers, and a gate electrode formed in contact with the second base layer. Part of the low resistance buffer layer is exposed to the surface of the first emitter layer and is made contact with the anode main electrode to constitute a shorting portion. The width of the shorting portion is set smaller than one tenth of that of the second emitter layer in a longitudinal direction.

REFERENCES:
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patent: 4689647 (1987-08-01), Nakagawa et al.
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Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, "6000 V Gate Turn-Off Thyristor (GTO) with N-buffer and New Anode Short Structure", Aug. 25-27, 1987.

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