1979-11-09
1982-04-13
Larkins, William D.
357 13, 357 38, 357 39, 357 90, H01L 2974
Patent
active
043250742
ABSTRACT:
Provided is a semiconductor switching device having a four-layer structure. A second semiconductor layer of the switching device has a depth of 8.mu.. The thickness of the second semiconductor layer is set at a value less than a value four times the thickness of a depletion layer which is formed in the second semiconductor layer when breakover voltage has been applied to the switching device.
REFERENCES:
patent: 2993154 (1961-07-01), Goldey et al.
patent: 4112458 (1978-09-01), Jaskolski et al.
Osada Yoshihide
Sugioka Syuji
Larkins William D.
Tokyo Shibaura Electric Co. Ltd.
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