Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2010-02-17
2011-11-01
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C438S234000, C257SE21696
Reexamination Certificate
active
08048724
ABSTRACT:
A switching device and methods of making and operating the same are provided. In one aspect, a method of operating a switching device is provided that includes providing a MOS transistor that has a gate, a source region, a drain region and a body region. A bipolar transistor is provided that has a collector, a base and an emitter. The body region of the MOS transistor serves as the base of the bipolar transistor and the drain region of the MOS transistor serves as the collector of the bipolar transistor. Activation of the MOS transistor causes the bipolar transistor to turn on. The MOS transistor is activated to turn on the bipolar transistor and the bipolar transistor delivers current to the source region.
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Rudolf F. Graf;Modern Dictionary of Electronics, 7thEd., 1999, pp. 782-783.
Advanced Micro Devices , Inc.
Chaudhari Chandra
Honeycutt Timothy M.
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