Semiconductor switching device

Details Semiconductor switching device Semiconductor switching device

2007-04-17

2007-04-17

Anderson, Matthew (Department: 2618)

Telecommunications

Transmitter and receiver at same station

With transmitter-receiver switching or interaction prevention

C455S083000, C257S020000, C257S024000, C257S027000, C257S192000, C257S210000

Reexamination Certificate

active

10105802

ABSTRACT:
A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. The gate width of each FET is about 400 μm, and the maximum power required for the device operation is maintained by a lager conductivity of the channel layer of one FET and by a lower conductivity of the channel layer of another FET. The device operates at frequencies of 2.4 GHz or higher without use of shunt FET.

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