1977-05-03
1979-12-04
Larkins, William D.
357 64, 357 91, 357 29, H01L 2974, H01L 29167
Patent
active
041774779
ABSTRACT:
The stabilization of electrical switching parameters in a semiconductor switching device is achieved by selectively doping a portion of semiconductor material with a heavy metal and irradiating the remaining semiconductor material. In an important embodiment of the invention, a center-fired four region semiconductor switching device consisting of silicon semiconductor material is prepared by gold doping the silicon in the area around the center firing gate contact where initial conduction of current is concentrated. The remainder of the active area of the device is irradiated to provide recombination centers for fast switching without the adverse effect on blocking leakage current that is attributable to indiscriminate gold doping. The gold provides recombination centers in the initial conductive area which are not subject to annealing as are the recombination centers provided by irradiation.
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Gamo Hiroshi
Hokuyo Shigeru
Adams Bruce L.
Burns Robert E.
Larkins William D.
Lobato Emmanuel J.
Mitsubishi Denki & Kabushiki Kaisha
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